Effects of oxygen pressure on the growth of pulsed laser deposited ZnO films on Si(001)
作者： Sang Sub Kim , Byung-Teak Lee
DOI: 10.1016/J.TSF.2003.09.057
关键词: Deposition (law) 、 Thin film 、 Torr 、 Scanning electron microscope 、 Optics 、 Microstructure 、 Crystallinity 、 Laser ablation 、 Pulsed laser deposition 、 Chemistry 、 Chemical engineering
摘要: Abstract ZnO thin films were prepared on Si(0 0 1) substrates using a pulsed laser deposition (PLD) technique and then their growth properties investigated particularly as function of ambient O 2 pressure during film growth. It was found that the microstructure, crystallinity, orientation optical grown are strongly dependent pressures used. Completely c -axis oriented in low regime (5×10 −4 –5×10 −2 Torr), whereas randomly with much lower crystallinity rougher grained-surface is at an 5×10 −1 Torr. This deterioration quality may be associated kinetics atomic arrangements deposition. Our results suggest important processing parameter should optimized narrow order to grow good PLD process.
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