A double barrier memristive device.
作者： M. Hansen , M. Ziegler , L. Kolberg , R. Soni , S. Dirkmann
DOI: 10.1038/SREP13753
关键词: Quantum tunnelling 、 Neuromorphic engineering 、 Current (fluid) 、 Optoelectronics 、 Materials science 、 Quantum 、 Mixed-signal integrated circuit 、 Layer (electronics) 、 Artificial intelligence 、 Random access 、 Schottky diode
摘要: We present a quantum mechanical memristive Nb/Al/Al2O3/NbxOy/Au device which consists of an ultra-thin layer (NbxOy) sandwiched between Al2O3 tunnel barrier and Schottky-like contact. A highly uniform current distribution for the LRS (low resistance state) HRS (high areas ranging 70 μm2 2300 μm2 were obtained, indicates non-filamentary based resistive switching mechanism. In detailed experimental theoretical analysis we show evidence that originates from oxygen diffusion modifications local electronic interface states within NbxOy layer, influences properties Au (Schottky) contact tunneling barrier, respectively. The presented might offer several benefits like intrinsic compliance, improved retention no need electric forming procedure, is especially attractive possible applications in dense random access memories or neuromorphic mixed signal circuits.
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