Bond lengths around isovalent impurities and in semiconductor solid solutions

作者: José Luís Martins , Alex Zunger

DOI: 10.1103/PHYSREVB.30.6217

关键词: Atomic physicsImpurityLattice (order)Bond lengthSemiconductor alloysSemiconductorSolid solutionValence force fieldMaterials scienceExtended X-ray absorption fine structure

摘要: Using a valence force field, we predict the symmetric lattice distortions around isovalent impurities in 64 semiconductor-impurity systems. For five systems for which extended x-ray absorption fine-structure (EXAFS) data are available, results excellent agreement with experiment. Our theory also explains quantitatively, without adjustable parameters, observed bond-length variations solid solutions ${A}_{1\ensuremath{-}x}{B}_{x}C$ of semiconductor alloys, as well their excess enthalpies mixing.

参考文章(23)
X-ray reflexions from dilute solid solutions Proceedings of The Royal Society A: Mathematical, Physical and Engineering Sciences. ,vol. 190, pp. 102- 117 ,(1947) , 10.1098/RSPA.1947.0064
A. Baldereschi, J. J. Hopfield, Binding to Isoelectronic Impurities in Semiconductors Physical Review Letters. ,vol. 28, pp. 171- 174 ,(1972) , 10.1103/PHYSREVLETT.28.171
T. N. Morgan, H. Maier, Strain Fields and the Apparent Size of Donor Ions in GaP Physical Review Letters. ,vol. 27, pp. 1200- 1203 ,(1971) , 10.1103/PHYSREVLETT.27.1200
W. Lawrence Bragg, XVIII. The arrangement of atoms in crystals Philosophical Magazine Series 1. ,vol. 40, pp. 169- 189 ,(1920) , 10.1080/14786440808636111
L. Vegard, Die Konstitution der Mischkristalle und die Raumfüllung der Atome European Physical Journal. ,vol. 5, pp. 17- 26 ,(1921) , 10.1007/BF01349680
A. -B. Chen, A. Sher, Gap Variation in Semiconductor Alloys and the Coherent-Potential Approximation Physical Review Letters. ,vol. 40, pp. 900- 903 ,(1978) , 10.1103/PHYSREVLETT.40.900
J. C. Mikkelsen, J. B. Boyce, Extended x-ray-absorption fine-structure study of Ga 1-x In x As random solid solutions Physical Review B. ,vol. 28, pp. 7130- 7140 ,(1983) , 10.1103/PHYSREVB.28.7130
Alex Zunger, J. E. Jaffe, Structural Origin of Optical Bowing in Semiconductor Alloys Physical Review Letters. ,vol. 51, pp. 662- 665 ,(1983) , 10.1103/PHYSREVLETT.51.662
J. E. Jaffe, Alex Zunger, Anion displacements and the band-gap anomaly in ternaryABC2chalcopyrite semiconductors Physical Review B. ,vol. 27, pp. 5176- 5179 ,(1983) , 10.1103/PHYSREVB.27.5176