High Electrical Resistivity $1.55~\mu$ m Photoconductive Switch Using a Barrier Structure
作者： Kian Hua Tan , Wan Khai Loke , Satrio Wicaksono , Soon Fatt Yoon
关键词: Optoelectronics 、 Optical switch 、 Quantum tunnelling 、 Photonics 、 Electrical resistivity and conductivity 、 Molecular beam epitaxy 、 Photonic crystal 、 Omega 、 Barrier layer 、 Materials science
摘要: We propose a low temperature grown Be-doped InGaAs vertically aligned barrier structure to increase the dark electrical resistivity of $1.55~\mu \text{m}$ photoconductive switch. The insertion 100 nm-thick AlAs0.56 Sb0.44 layer with large conduction band offset In0.53 Ga0.47As blocks flow majority carrier. In this study, samples are using molecular beam epitaxy system. I-V measurement shows that effective increases from $0.5\Omega $ cm $8.5\times 10^{4}\Omega cm. thickness nm 400 does not further. photo-response is also measured and analyzed. This study demonstrates new approach achieve high in
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