Raman scattering studies of the lateral Mn distribution in MBE-grown Ga1-xMnxN epilayers
作者： Katarzyna Gas , Detlef Hommel , Maciej Sawicki
DOI: 10.1016/J.JALLCOM.2019.152789
关键词: Key issues 、 Optoelectronics 、 Sapphire 、 Characterization methods 、 Quality (physics) 、 Molecular beam epitaxy 、 Materials science 、 Raman scattering 、 Distribution (number theory) 、 Single phase
摘要: Abstract Recent interest in very thin single phase Ga1-xMnxN dilute magnetic layers increased needs for precise, non-destructive, and relatively fast characterization methods with key issues being the macroscopic lateral Mn distribution absolute values of concentration x. We report on resonantly enhanced UV Raman scattering studies high quality Ga1−xMnxN grown GaN templated sapphire by molecular beam epitaxy 4
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