Bipolar-MOS IC with internal voltage generator and LSI device with internal voltage generator

摘要: There are provided a bipolar-MOS IC device smaller than half-micron scale, and combination of such external circuits. The has an internal voltage generating circuit for power source by using source, the being lower that source. includes NPN transistor formed in N-type region or island within P-type semiconductor substrate device, PMOS island. collector used as terminals. drain is connected to base transistor. gate control signal terminal. emitter output A current path from input terminal accordingly isolated substrate.