作者: Erno Gyarmati , Aristides Naoumidis
DOI:
关键词: Silicide 、 Layer (electronics) 、 Carbide 、 Materials science 、 Silicon 、 Carbon 、 Silicon carbide 、 Inert 、 Metallurgy 、 Argon
摘要: Silicon carbon molded parts, whether made of silicon carbide sintered together in the absence pressure or hot pressed are bonded at close fitting surfaces by applying a layer not thicker than 1 μm on polished to be joined, containing least one and/or silicide forming element from group Ag, Al, Au, B, Be, Co, Cr, Cu, Fe, Mg, Mn, Mo, Nb, Ni, Pd, Pt, Ta, Ti, V, W and Zr. The joined fitted heated an inert reducing atomosphere between 10-1 10-5 Pa temperatures range 800° 2200° C. while under applied which is 100 MPa. In particular, heat treatment 1550° 1750° 15 45 MPa argon 103 105 argon, for 30 60 minutes. Preferably thin vapor-deposited sputtered. Pt especially Cu its alloys, have been found particularly effective.