Microstructure evolution of GaSe thin films grown on GaAs(100) by molecular beam epitaxy
作者： Z. R. Dai , S. R. Chegwidden , L. E. Rumaner , F. S. Ohuchi
DOI: 10.1063/1.369578
关键词: Substrate (electronics) 、 Microstructure 、 Crystallography 、 Optoelectronics 、 Molecular beam epitaxial growth 、 Transmission electron microscopy 、 Molecular beam epitaxy 、 Vacancy defect 、 Thin film 、 Texture (crystalline) 、 Materials science
摘要: GaSe thin films were grown on a GaAs(100) substrate by molecular beam epitaxy. Microstructures of the and interface characterized transmission electron microscopy. The dominant polytype formed in was γ type, which has 3R-rhombohedral structure with R3m space group. Predominant crystallographic orientation between GaAs as: [1100]GaSe‖[011]GaAs/(0001)GaSe‖(100)GaAs. In addition, [1210]GaSe‖[011]GaAs/(0001)GaSe‖(100)GaAs can also grow some local areas. constitutes intermediate layers vacancy ordered β-Ga2Se3, inherits features surface. Mechanisms responsible for formation preferable initial growth stage are suggested.
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