作者: Jin-Mun Yun , Yong-Jin Noh , Jun-Seok Yeo , Yeong-Jin Go , Seok-In Na
DOI: 10.1039/C3TC30504J
关键词: High performance polymer 、 Electron transport chain 、 Work function engineering 、 Nanotechnology 、 Materials science 、 Solution processed 、 Thin film 、 Materials Chemistry 、 General chemistry
摘要: The work-function of MoS2 interfacial layers can be efficiently modulated by p- and n-doping treatments. As a result, the PCE devices with p-doped MoS2-based HTL is increased from ∼2.8 to ∼3.4%. Particularly, after was dramatically due change in compared un-doped thin-films.