Proton-implanted Ti:sapphire buried channel-waveguide lasers
作者： P. Moretti , D.P. Shepherd , R.W. Eason , Markus Pollnau , L. Laversenne
DOI:
关键词: Absorbed power 、 Ti:sapphire laser 、 Proton 、 Sapphire 、 Channel (broadcasting) 、 Waveguide lasers 、 Optoelectronics 、 Materials science 、 Laser
摘要: Continuous laser emission near 780 nm was demonstrated in proton-implantated Ti:sapphire buried channel waveguides. Absorbed pump power thresholds as low 230mW and output powers of 17mW for 1-W absorbed were obtained.
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