Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors
作者： Valentin O. Turin , Alexander A. Balandin
DOI: 10.1063/1.2336299
关键词: Diffusion (business) 、 Materials science 、 Wide-bandgap semiconductor 、 Thermal 、 Optoelectronics 、 Method of images 、 Field-effect transistor 、 Heat transfer 、 Transistor 、 Sapphire
摘要: … self-heating effects in GaN-based high-power field-effect transistors. … Two-dimensional electrothermal simulations of the GaN … the thermal effects in GaN metal-semiconductor field-effect …
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sci-hub.se 参考文章(42)
V Bougrov, ME Levinshtein, Sergey L Rumyantsev, A Zubrilov, MS Shur, Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe John Wiley. ,(2001)
Weili Liu, Alexander A. Balandin, Temperature dependence of thermal conductivity of AlxGa1−xN thin films measured by the differential 3ω technique Applied Physics Letters. ,vol. 85, pp. 5230- 5232 ,(2004) , 10.1063/1.1829168
Weili Liu, Alexander A. Balandin, Thermal conduction in AlxGa1−xN alloys and thin films Journal of Applied Physics. ,vol. 97, pp. 073710- ,(2005) , 10.1063/1.1868876
N. Braga, R. Mickevicius, R. Gaska, X. Hu, M. S. Shur, M. Asif Khan, G. Simin, J. Yang, Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors Journal of Applied Physics. ,vol. 95, pp. 6409- 6413 ,(2004) , 10.1063/1.1719262
Valentin O. Turin, A modified transferred-electron high-field mobility model for GaN devices simulation Solid-state Electronics. ,vol. 49, pp. 1678- 1682 ,(2005) , 10.1016/J.SSE.2005.09.002
Seikoh Yoshida, Hirotatsu Ishii, Jiang Li, Deliang Wang, Masakazu Ichikawa, A high-power AlGaN/GaN heterojunction field-effect transistor Solid-state Electronics. ,vol. 47, pp. 589- 592 ,(2003) , 10.1016/S0038-1101(02)00419-7
A. Balandin, S. Cai, R. Li, K.L. Wang, V.R. Rao, C.R. Viswanathan, Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors IEEE Electron Device Letters. ,vol. 19, pp. 475- 477 ,(1998) , 10.1109/55.735751
Tigran T Mnatsakanov, Michael E Levinshtein, Lubov I Pomortseva, Sergey N Yurkov, Grigory S Simin, M Asif Khan, Carrier mobility model for GaN Solid-state Electronics. ,vol. 47, pp. 111- 115 ,(2003) , 10.1016/S0038-1101(02)00256-3
M. Asif Khan, J. N. Kuznia, A. R. Bhattarai, D. T. Olson, Metal semiconductor field effect transistor based on single crystal GaN Applied Physics Letters. ,vol. 62, pp. 1786- 1787 ,(1993) , 10.1063/1.109549
Udayan V. Bhapkar, Michael S. Shur, Monte Carlo calculation of velocity-field characteristics of wurtzite GaN Journal of Applied Physics. ,vol. 82, pp. 1649- 1655 ,(1997) , 10.1063/1.365963