High permittivity gate dielectric materials
作者： Samares Kar , None
DOI: 10.1007/978-3-642-36535-5
关键词: Metal gate 、 Permittivity 、 Dielectric 、 Time-dependent gate oxide breakdown 、 Threshold voltage 、 Gate dielectric 、 Gate oxide 、 Optoelectronics 、 High-κ dielectric 、 Materials science 、 Electrical engineering
摘要: Historical Perspectives.- High Mobility Channels.- Non-Volatile Memory.- Hafnium-Based Gate Dielectric Materials.- Lanthanum-Based High-K Crystalline Processing.- Metal Electrodes.- Flat-Band/Threshold Voltage Control.- Interfaces and Defects.- Electrical Characterization Parameter Extraction.- Non-Contact Metrology of Dielectrics.- Channel Mobility.- Reliability Issues.- Bias Temperature Instability.- Integration Issues.
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