Antisymmetric contribution to the planar Hall effect ofFe3Sifilms grown onGaAs(113)Asubstrates

摘要: The planar Hall effect (PHE) in ferromagnets is believed to result from the anisotropic magnetoresistance (AMR) and hence does not change sign by reversing direction of applied in-plane magnetic field. Our studies ferromagnetic Heusler alloy ${\mathrm{Fe}}_{3}\mathrm{Si}$ films grown on low-symmetric GaAs(113)A substrates however show a PHE field, indicating existence an additional antisymmetric component superimposed with usual symmetric AMR term. This shows maximum along major $⟨33\overline{2}⟩$ axes vanishes other $⟨\overline{1}10⟩$ axes. A phenomenological model based symmetry crystal provides good explanation observed contribution PHE. that this arises part magnetoresistivity tensor basically second order effect. It shown can be ascribed Umkehr effect, which refers coexistence even odd terms tensor. reversal also found for Si content above 21 at. % at temperatures below certain critical temperature increases increasing content.