Energy level splitting and luminescence enhancement in AlN:Er by an external magnetic field
作者： Muhammad Maqbool , Iftikhar Ahmad , Ghafar Ali , Khan Maaz
DOI: 10.1016/J.OPTMAT.2015.05.039
关键词: Photoluminescence 、 Laser 、 Atomic physics 、 Optoelectronics 、 Infrared 、 Excitation 、 Energy level splitting 、 Thin film 、 Luminescence 、 Materials science 、 Crystal
摘要: Abstract Sputter deposited thin film AlN:Er (1 at.%) emits at 554 nm and 561 nm as a result of 2 H 11/2 → 4 I 15/2 S 3/2 transitions under 532 nm NdYAG laser 783.3 nm crystal excitation. An external magnetic field 0.1 T enhances the green emission splits 3/2 energy level in two sub-levels with difference 0.013 eV. The splitting produces new from Er 3+ wavelength 564.5 nm. Infrared is also observed 1552 nm 13/2 transition. Enhanced luminescence shows suitability for high efficiency optical devices.
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