Low noise voltage and charge preamplifiers for phonon and ionization detectors at very low temperature
作者： D Yvon , A Cummings , W Stockwell , P Barnes , C Stanton
DOI: 10.1016/0168-9002(95)00665-6
关键词: Preamplifier 、 Optoelectronics 、 Noise (electronics) 、 Physics 、 Amplifier 、 Noise spectral density 、 Noise temperature 、 Capacitance 、 Y-factor 、 Charge amplifier
摘要: We have developed voltage and charge sensitive FET preamplifiers which feature ultra low noise, convenience flexibility for phonon ionization detectors operated at 20 mK. With an NJ132L J-FET, the white noise of amplifier is 1.1 nV/√Hz room temperature 0.9 when cooled to ≈120 K; 1f knee below 100 Hz. The power dissipation FET, about 7 mW in our application, allows it be used a 4 K environment. same has shown 120 e− rms with total input capacitance 45 pF.
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