Effective properties of undoped and Indium 3+ -doped tin manganese telluride (Sn 1−x Mn x Te) nanoparticles via using a chemical bath deposition route
作者： Patsorn Boon-on , Auttasit Tubtimtae , Veeramol Vailikhit , Pichanan Teesetsopon , Supab Choopun
DOI: 10.1016/J.PHYSLETA.2017.03.019
关键词: Dopant 、 Cyclic voltammetry 、 Chemical bath deposition 、 Niobium pentoxide 、 Indium 、 Tin 、 Telluride 、 Analytical chemistry 、 Physics 、 Doping
摘要: Abstract Tin manganese telluride nanoparticles (Sn 1 − x MnxTe NPs) were first synthesized on a niobium pentoxide (Nb2O5) film using chemical bath deposition (CBD) route. An individual particle size before and after indium (In3+) doping of ∼70–150 nm was investigated with stoichiometric formation the SnMnTe phase. Furthermore, cubic or rocksalt structure Sn0.938Mn0.062Te phase also kept incorporated in structure. The plotted energy band gaps for undoped In3+-doped samples 2.17 1.83 eV, respectively. reduction photoluminescence (PL) spectra In3+ doping, while dopant acted as trap state Sn NPs, showed enhanced charge separation reduced recombination, which resulted higher density trapped conduction Nb2O5 confirmed by result anodic peaks cyclic voltammetry. These results suggest new possibilities optoelectronic electrochemical devices.
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