Critical scattering in the vicinity of the metal-insulator transition in Mn-doped GaAs
作者： Aapo Varpula , S Novikov , Pekka Kuivalainen , None
关键词: Born approximation 、 Spintronics 、 Scattering 、 Condensed matter physics 、 Metal–insulator transition 、 Charge carrier 、 Electrical resistivity and conductivity 、 Materials science 、 Exchange interaction 、 Magnetic semiconductor 、 Electronic, Optical and Magnetic Materials
摘要: We have developed an improved model for describing the electrical transport properties of diluted ferromagnetic semiconductors such as Mn-doped GaAs. The takes into account mechanisms in disordered vicinity metal–insulator transition and critical scattering due to exchange interaction between charge carrier spins localized magnetic moments. is based on Kubo–Greenwood formalism scaling theory localization. contribution from calculated using Green's function technique self-consistent Born approximation. explains well measured resistivity GaAs a temperature, doping concentration, field.
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