Theory of Thermally Stimulated Conductivity in a Previously Photoexcited Crystal

摘要: The theory of thermally stimulated conductivity (TSC) for a single trap depth in the presence deeper traps, and type recombination center, has been developed detail without making customary restrictive approximations assumptions based on relative importance or retrapping, constancy lifetime. General conclusions about shape TSC curve are presented, depending ratio to trapping probabilities, density traps interest that traps. results applied particular cases first-order kinetics, strong retrapping with constant lifetime, varying A critical discussion is given analysis data according methods involving quasi-Fermi-level, half-widths curve, heating rates, initial activation energy at beginning curve. It concluded method decayed provides most reliable determination depth. can be readily adapted application systems more than one center.