Vertical transmon qubit device

作者: Rasit Onur Topaloglu , Sami Rosenblatt , Markus Brink

DOI:

关键词: CapacitorOptoelectronicsChipSubstrate (printing)Superconducting materialQubitJosephson effectBase (geometry)TransmonMaterials science

摘要: Techniques for a vertical transmon qubit device are provided. In one embodiment, chip surface base structure is provided that comprises first superconducting material physically coupled to crystalline substrate, wherein the substrate second material, substrate. implementation, also Josephson junction located in via of comprising tunnel barrier, and material. capacitor formed between

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