Investigations on co-evaporated Cu2SnSe3 and Cu2SnSe3–ZnSe thin films
作者： P. Uday Bhaskar , G. Suresh Babu , Y.B. Kishore Kumar , V. Sundara Raja
DOI: 10.1016/J.APSUSC.2011.05.008
关键词: Thin film 、 Raman spectroscopy 、 Selenium 、 X-ray crystallography 、 Band gap 、 Solar cell 、 Layer (electronics) 、 Annealing (metallurgy) 、 Mineralogy 、 Chemistry 、 Analytical chemistry
摘要: Abstract Cu2SnSe3 is an important precursor material for the growth of Cu2ZnSnSe4, emerging solar cell absorber layer via solid state reaction and ZnSe. In this study, we have grown (CTSe) Cu2SnSe3–ZnSe (20%) films onto soda-lime glass substrates held at 573 K by co-evaporation technique. The effect annealing these 723 K hour in selenium atmosphere also investigated. XRD studies as-deposited indicated SnSe as secondary phase which disappeared on annealing. direct optical band gap annealed were found to be 0.90 eV 0.94 eV respectively. Raman spectroscopy used understand ZnSe properties Cu2SnSe3.
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