Shunt Passivation Method for Amorphous Silicon Thin Film Photovoltaic Modules

摘要: A method for reducing shunt-related defects is described hydrogenated amorphous silicon (a-Si:H) thin film photovoltaic modules with active a-Si:H absorber as required by building integrated windows and sun-roofs adequate transmission of sunlight. Without shunt-passivation, p-i-n type large area very i-layer will suffer excessive performance, yield, reliability losses due to electrical shorting through defects. Wide-bandgap based alloy films sufficient resistivity are deposed between the solar cell conductive back electrode provide a barrier leakage current flow. Such high optical transparency dummy that do not directly contribute energy conversion. The shunt-passivation entirely produced same conventional manufacturing process devices without invoking complicated or exotic materials procedures proposed in prior arts.