Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
作者： G. Martin , A. Botchkarev , A. Rockett , H. Morkoç
DOI: 10.1063/1.116177
关键词: Photoemission spectroscopy 、 Binding energy 、 Optoelectronics 、 Piezoelectricity 、 Materials science 、 Condensed matter physics 、 Wurtzite crystal structure 、 Electronic structure 、 X-ray spectroscopy 、 Heterojunction 、 Spectroscopy
摘要: The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x‐ray photoemission spectroscopy. A significant forward–backward …
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researchgate.net 参考文章(1)
J. L. Shay, Sigurd Wagner, J. C. Phillips, Heterojunction band discontinuities Applied Physics Letters. ,vol. 28, pp. 31- 33 ,(1976) , 10.1063/1.88555