Epitaxial growth of ZnO films on lattice-matched ScAlMgO4(0001) substrates

摘要: Abstract The use of lattice-matched (0.09%) hexagonal oxide substrate, ScAlMgO 4 , has considerably improved the quality ZnO films grown by laser molecular-beam epitaxy. Surface morphology was extremely smooth as represented atomically flat terraces and 0.26 nm high steps corresponding to charge neutral unit ZnO. Crystallinity comparable that bulk single crystals: full-width at half-maximum value ZnO(0 0 0 2) rocking curve 39 arcsec. Optical absorption spectra showed clear splitting A- B-exciton lines, indicating low damping. Residual carrier concentration in pristine 10 15  cm −3 with keeping electron mobility ∼100 cm 2 /V s. Therefore, on (0 0 0 1) substrates can be a starting point for realizing p-type In fact, (∼10 21 ) nitrogen doped crystallinity.