Ion Trapping and Cluster Growth
作者： A. Veen
DOI: 10.1007/978-94-009-4422-0_12
关键词: Ion 、 Ion trapping 、 Frenkel defect 、 Irradiation 、 Atom 、 Impurity 、 Trapping 、 Materials science 、 Chemical physics 、 Fluence
摘要: During irradiation of a solid surface with energetic ions the fate an implanted ion is determined 1. by its location in lattice, 2. defect concentration around atom, and 3. mobility atom either thermally activated migration interaction other mobile defects. At low fluence not influenced interactions collision cascades caused nor defects emerging from these cascades. The acts as dominant sink for increasingly higher fluences effects interference between products succesive become visible. Non-linearity growth populations then observed, sometimes including clustering atoms. Trapping processes early stages cluster development are discussed He, noble gas atoms, light impurities H N, metallic metals.
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