Corrosion Prevention in Metals Using Layered Semi-conductor/Insulator Structures Forming an Interfacial Electronic Barrier

摘要: A new approach to corrosion prevention involving the use of layered semiconductor/insulator films on metal surfaces is described. It shown that improved protection due existence a built-in electronic barrier at metal-semiconductor (MS) or metal(thin) insulator-semiconductor (MIS) interfaces. This in contrast conventional techniques which rely physical barriers (e.g., paints) high resistivity oxide/nitride exposed surfaces. The barrier, arises charge redistribution MS MIS interface, serves impede transfer electrons from surface foreign oxidizing species, thereby preventing oxidation. Specific structures fabricated and tested include: Al-Indium Tin Oxide (ITO) for Al-Si02-ITO configurations. comparison with Al-S13N4 (passive barrier) also made. High purity (single polycrystalline) commercial aluminum alloy (7075-T6) samples were used this study. Cathodic anodic polarization data, weight-loss measurements, results physical, optical characterizations are presented numerous samples. magnitude height, resultant protection, enhanced by: (1) presence thin (20-100A) Si02 (insulator) layer, (2) an increased indium/tin ratio ITO films, larger energy gap. application active concept semiconducting polymers such as doped polyacetylene, phthalocyanine chlorophyll discussed.