Enhanced photocatalytic activity and dielectric property of c-axis oriented Bi2VO5.5 thin film by Gd3+ doping

摘要: Abstract Bismuth-layered perovskite Bi 2− x Gd VO 5.5 ( =0, 0.02, 0.04, 0.06, 0.08, and 0.10) thin films with preferred c -axis orientation were deposited on fused silica substrates by using a chemical solution deposition method. The X-ray diffraction, scanning electron microscopy, optical measurements of the characterized photodegradation Methylene Blue was used as probe reaction to test photocatalytic activities films. also Pt(111)/Ti/SiO 2 /Si same method measure their dielectric properties. With increasing 3+ -doping content , photoactivity film increased, optimum activity appeared when value 0.08. degradation rate obtained 90% irradiated under UV light for 3 h existence 1.92 0.08 film. reason enhancement originates from two positive factors. One is trap generated special 7f electronic configuration which could increase separation photoinduced hole pairs. other that Debye length increases constant films, then width space charge region in solid–liquid interface broadened, will make more carriers available catalytic reaction. results above indicate are promising candidate materials environmental pollution control.