Spin and cyclotron energies of electrons in GaAs ∕ Ga 1 − x Al x As quantum wells

摘要: A five-level $\mathbf{P}∙\mathbf{p}$ model of the band structure for $\mathrm{GaAs}$-type semiconductors is used to describe spin ${g}^{*}$ factor and cyclotron mass ${m}_{c}^{*}$ conduction electrons in $\mathrm{GaAs}∕{\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Al}}_{x}\mathrm{As}$ quantum wells an external magnetic field parallel growth direction [001]. It demonstrated that previous theory heterostructures inadequate. Our approach based on iteration procedure solving 14 coupled differential equations. The applicability verified. final eigenenergy problem subbands reduced two equations spin-up spin-down states consecutive Landau levels. shown bulk inversion asymmetry III-V compounds importance factor. with no adjustable parameters gives excellent description experimental data electron $\mathrm{GaAs}∕{\mathrm{Ga}}_{0.67}{\mathrm{Al}}_{0.33}\mathrm{As}$ rectangular different well widths between 3 $21\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$. same describes very masses $\mathrm{GaAs}∕{\mathrm{Ga}}_{0.74}{\mathrm{Al}}_{0.26}\mathrm{As}$ 6 $37\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$.