pH dependence of the Si/SiO2 interface state density for EOS systems: Quasi-static and AC conductance methods
作者： J.L. Diot , J. Joseph , J.R. Martin , P. Clechet
DOI: 10.1016/0022-0728(85)85053-1
关键词: Heterojunction 、 Dielectric 、 Quasistatic process 、 Electrolyte 、 Chemistry 、 Conductance 、 Silicon 、 Analytical chemistry 、 Electrical impedance 、 Capacitance
摘要: Abstract Two combined impedance methods, developed for solid state MOS (Metal Oxide Semiconductor) devices, are used to check the electrical properties of home-made EOS (Electrolyte systems. This set-up, fitted with a three-electrode monitoring system, allows both quasi-static capacitance and ac conductance wet heterostructures be measured. The two sets data, which complement each other perfectly, show that oxidized silicon pH has an extremely small erratic influence on Si/SiO 2 interface density. result confirms sensitive dielectric in such sensors is SiO /electrolyte interface.
elsevier.com
sci-hub.se 参考文章(20)
G. Nagasubramanian, B. L. Wheeler, A. J. Bard, Semiconductor Electrodes XLIX . Evidence for Fermi Level Pinning and Surface‐State Distributions from Impedance Measurements in Acetonitrile Solutions with Various Redox Couples Journal of The Electrochemical Society. ,vol. 130, pp. 1680- 1688 ,(1983) , 10.1149/1.2120062
M. Kuhn, A quasi-static technique for MOS C-V and surface state measurements Solid-State Electronics. ,vol. 13, pp. 873- 885 ,(1970) , 10.1016/0038-1101(70)90073-0
P. Bergveld, N.F. De Rooij, The history of chemically sensitive semiconductor devices Sensors and Actuators. ,vol. 1, pp. 5- 15 ,(1981) , 10.1016/0250-6874(81)80003-0
M. J. Madou, K. W. Frese, S. R. Morrison, The silicon/silica electrode Physica Status Solidi (a). ,vol. 57, pp. 705- 712 ,(1980) , 10.1002/PSSA.2210570229
S. Yolou, L. Nadjo, Surface states at the TiO2/Acetonitrile interface Journal of Electroanalytical Chemistry and Interfacial Electrochemistry. ,vol. 159, pp. 449- 457 ,(1983) , 10.1016/S0022-0728(83)80641-X
Bruce E. Deal, Standardized Terminology for Oxide Charges Associated with Thermally Oxidized Silicon Journal of The Electrochemical Society. ,vol. 127, pp. 979- 981 ,(1980) , 10.1149/1.2129800
Luc Bousse, Nico F. De Rooij, P. Bergveld, The influence of counter-ion adsorption on the ψ0/pH characteristics of insulator surfaces Surface Science. ,vol. 135, pp. 479- 496 ,(1983) , 10.1016/0039-6028(83)90237-6
Luc Bousse, Piet Bergveld, The role of buried OH sites in the response mechanism of inorganic-gate pH-sensitive ISFETs Sensors and Actuators. ,vol. 6, pp. 65- 78 ,(1984) , 10.1016/0250-6874(84)80028-1
Luc Bousse, Piet Bergveld, On the impedance of the silicon dioxide/electrolyte interface Journal of Electroanalytical Chemistry. ,vol. 152, pp. 25- 39 ,(1983) , 10.1016/S0022-0728(83)80030-8
E. H. Nicollian, A. Goetzberger, The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique Bell System Technical Journal. ,vol. 46, pp. 1055- 1133 ,(1967) , 10.1002/J.1538-7305.1967.TB01727.X