Effects of hydrostatic pressure on the electrical properties of hexagonal Ge2Sb2Te5: Experimental and theoretical approaches
作者： B. Xu , Y. Su , Z. G. Liu , C. H. Zhang , Y. D. Xia
DOI: 10.1063/1.3577606
关键词: Hydrostatic pressure 、 Materials science 、 Computational chemistry 、 Order of magnitude 、 Conductivity 、 Condensed matter physics 、 Electronic band 、 Hexagonal crystal system
摘要: A combination of experiments and first-principles method calculations has been applied to investigate the influence hydrostatic pressure on electrical properties phase-change material hexagonal Ge2Sb2Te5 (h-GST). Experimentally, it is found that resistance h-GST declines monotonically with increasing up 0.7 GPa. Theoretically, band-structure revealed electronic band gap also decreases pressure. The increases conductivity by reducing gap. dEg/dP obtained from theoretical d ln ρ/dP experimental result are in same order magnitude.
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