Preferential lateral chemical etching in reactive ion etching of aluminum and aluminum alloys

摘要: Reactive ion etching of aluminum and its alloys in CCl4/argon plasmas produces vertical etch profiles residue‐free etched regions. However, under certain conditions, preferential lateral chemical occurs, which pits the surface metal along edges lands. The is due to a thermally activated process related structure films. extent attack can be reduced by annealing films at 450°C before etching. Al–Cu deposited onto heated substrates are more susceptible than those evaporated lower temperatures. This apparent contradiction has not been resolved. effects temperature, plasma parameters, film will discussed. Scavenging responsible species additions H2 or O2 successful.