作者: Sang-seok Kang , Jong-Hyoung Lim
DOI:
关键词: Signal 、 Electrical engineering 、 Phase (waves) 、 Clock signal 、 Semiconductor memory 、 On-die termination 、 Materials science 、 Phase change
摘要: A semiconductor memory device is provided. The includes an on die termination circuit controlling a resistance value by detecting phase change of signal inputted through pad. Additionally, the changes when identical during n (n positive integer) periods clock signal.