Backside illuminated image sensor with reduced dark current
作者： Frederick T. Brady , John P. McCarten
DOI:
关键词: Image sensor 、 Dopant 、 Oxide 、 Epitaxy 、 Digital camera 、 Optoelectronics 、 Optics 、 Materials science 、 Dark current 、 Digital imaging 、 Layer (electronics)
摘要: A backside illuminated image sensor comprises a layer implementing plurality of photosensitive elements pixel array, and an oxide adjacent surface the layer. The seed epitaxial formed over layer, with having cross-sectional doping profile in which designated dopant is substantially confined to array area advantageously reduces dark current generated at interface between may be implemented digital camera or other type imaging device.
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