Design of a wideband multi-standard antenna switch for wireless communication devices

作者: Vlad Marian , Jacques Verdier , Bruno Allard , Christian Vollaire

DOI: 10.1016/J.MEJO.2011.01.005

关键词: GSMInsertion lossMobile telephonyAntenna (radio)WidebandMonolithic microwave integrated circuitElectronic engineeringElectrical engineeringEngineeringWirelessLow-power electronics

摘要: A wideband Low Power Single Pole 6-Throw (SP6T) antenna switch has been designed for GSM/DCS/802.11b mobile standards using a newly improved architecture and fabricated pseudomorphic depletion mode 0.18@mm HEMT GaAs process. The exhibits less than 1dB insertion loss isolation performances from up to 53dB at 0.8GHz down 42dB 2.5GHz. circuit DC power consumption is 500@mW in full transmission condition makes it suitable use terminals like phones or PDAs. paper presents simulation results validated by experimental measurements on an IC prototype.

参考文章(19)
Val Kaper, Richard Thompson, James R. Shealy, Tom Prunty, Monolithic AlGaN/GaN HEMT SPDT switch ,(2004)
C. Goldsmith, J. Kleber, B. Pillans, D. Forehand, A. Malczewski, P. Frueh, RF MEMS: benefits & challenges of an evolving RF switch technology ieee gallium arsenide integrated circuit symposium. pp. 147- 148 ,(2001) , 10.1109/GAAS.2001.964365
K. Fukamachi, S. Kemmochi, T. Yamashita, Low distortion and compact RF switch circuitry with the combination of PIN-diode and GaAs-FET for GSM quartet-band cellular phone european microwave conference. ,vol. 2, pp. 733- 736 ,(2004)
K. Yamamoto, T. Heima, A. Furukawa, M. Ono, Y. Hashizume, H. Komurasaki, S. Maeda, H. Sato, N. Kato, A 2.4-GHz-band 1.8-V operation single-chip Si-CMOS T/R-MMIC front-end with a low insertion loss switch IEEE Journal of Solid-state Circuits. ,vol. 36, pp. 1186- 1197 ,(2001) , 10.1109/4.938369
Ali Tombak, Christian Iversen, Jean-Blaise Pierres, Dan Kerr, Mike Carroll, Phil Mason, Eddie Spears, Todd Gillenwater, Cellular antenna switches for multimode applications based on a Silicon-on-Insulator technology radio frequency integrated circuits symposium. pp. 271- 274 ,(2010) , 10.1109/RFIC.2010.5477354
Sanghyo Lee, Jong-Man Kim, Yong-Kweon Kim, Youngwoo Kwon, A single-pole nine-throw antenna switch using radio-frequency microelectromechanical systems technology for broadband multi-mode and multi-band front-ends Journal of Micromechanics and Microengineering. ,vol. 18, pp. 015012- ,(2008) , 10.1088/0960-1317/18/1/015012
Pinping Sun, Peng Liu, Parag Upadhyaya, DongHo Jeong, Deukhyoun Heo, Essam Mina, Silicon-based PIN SPST RF switches for improved linearity international microwave symposium. pp. 948- 951 ,(2010) , 10.1109/MWSYM.2010.5515901
Paolo Crippa, Simone Orcioni, Francesco Ricciardi, Claudio Turchetti, A DC–5 GHz NMOSFET SPDT T/R switch in 0.25-μm SiGe BiCMOS technology international sige technology and device meeting. ,vol. 224, pp. 434- 438 ,(2004) , 10.1016/J.APSUSC.2003.09.020
T. Goh, R. Jackson, D. Gotch, Stat,e-of-the-art low loss, high isolation SP6T switch for handset applications european conference on wireless technology. ,(2004)
C. Tinella, V. Knopik, D. Belot, J.M. Fournier, A 0.7dB insertion loss CMOS–SOI antenna switch with more than 50dB isolation over the 2.5 to 5GHz band european solid-state circuits conference. pp. 483- 486 ,(2002)