作者: Yunhao Zhao , Lu Liu , Han Bi , Xi Han , Xuebing Zhao
DOI: 10.1039/C7NR04319H
关键词: Wave function 、 Optoelectronics 、 Superlattice 、 Electron holography 、 Quantum efficiency 、 Photoelectric effect 、 Physics 、 Charge density 、 Photodetector 、 Voltage
摘要: Quantum efficiency (QE) is a crucial parameter that determines the final performance of photodetector devices. Herein, by fitting charge distribution fluctuation under series bias voltages, revealed groups in situ electron holography experiments, simple model based on modulus square wave function (MSWF) qualitatively built to shed new light relationship between QE and overlap (WFO). It found there exists competition WFO potential well regions interface regions, peak value overall can be obtained an appropriate voltage. On combining such with measured results from actual infrared photodetectors, positive correlation manifested, boosted 51% 34%. Our offer perspective understanding carrier transportation within superlattice (SL) structures design photoelectric devices enhanced performance.