Morphology Control of Epitaxial Monolayer Transition Metal Dichalcogenides
作者： Akhil Rajan , Kaycee Underwood , Federico Mazzola , Philip D. C. King
DOI: 10.1103/PHYSREVMATERIALS.4.014003
关键词: Chemical physics 、 Materials science 、 van der Waals force 、 Monolayer 、 Transition metal 、 Semiconductor 、 Molecular beam epitaxy 、 Epitaxy 、 Chalcogen 、 Fabrication
摘要: To advance fundamental understanding, and ultimate application, of transition-metal dichalcogenide (TMD) monolayers, it is essential to develop capabilities for the synthesis high-quality single-layer samples. Molecular beam epitaxy (MBE), a leading technique fabrication highest-quality epitaxial films conventional semiconductors has, however, typically yielded only small grain sizes sub-optimal morphologies when applied van der Waals growth monolayer TMDs. Here, we present systematic study on influence adatom mobility, rate, metal:chalcogen flux NbSe2, VSe2 TiSe2 using MBE. Through this, identify key drivers kinetics that control TMDs, realising four distinct as-grown compounds. We use this determine optimised conditions ultimately largest TMDs have been achieved date via MBE growth.
arxiv.org
sci-hub.st 参考文章(41)
Masaro Yoshida, Ryuji Suzuki, Yijin Zhang, Masaki Nakano, Yoshihiro Iwasa, Memristive phase switching in two-dimensional 1T-TaS2 crystals. Science Advances. ,vol. 1, ,(2015) , 10.1126/SCIADV.1500606
Xiaoxiang Xi, Liang Zhao, Zefang Wang, Helmuth Berger, László Forró, Jie Shan, Kin Fai Mak, Strongly enhanced charge-density-wave order in monolayer NbSe2. Nature Nanotechnology. ,vol. 10, pp. 765- 769 ,(2015) , 10.1038/NNANO.2015.143
Bilu Liu, Mohammad Fathi, Liang Chen, Ahmad Abbas, Yuqiang Ma, Chongwu Zhou, Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study. ACS Nano. ,vol. 9, pp. 6119- 6127 ,(2015) , 10.1021/ACSNANO.5B01301
H. Cercellier, C. Monney, F. Clerc, C. Battaglia, L. Despont, M. G. Garnier, H. Beck, P. Aebi, L. Patthey, H. Berger, L. Forró, Evidence for an excitonic insulator phase in 1T-TiSe2. Physical Review Letters. ,vol. 99, pp. 146403- ,(2007) , 10.1103/PHYSREVLETT.99.146403
Xiaodong Xu, Wang Yao, Di Xiao, Tony F Heinz, None, Spin and pseudospins in layered transition metal dichalcogenides Nature Physics. ,vol. 10, pp. 343- 350 ,(2014) , 10.1038/NPHYS2942
T. A. Witten, L. M. Sander, Diffusion-limited aggregation, a kinetic critical phenomenon Physical Review Letters. ,vol. 47, pp. 1400- 1403 ,(1981) , 10.1103/PHYSREVLETT.47.1400
Yijun Yu, Fangyuan Yang, Xiu Fang Lu, Ya Jun Yan, Yong-Heum Cho, Liguo Ma, Xiaohai Niu, Sejoong Kim, Young-Woo Son, Donglai Feng, Shiyan Li, Sang-Wook Cheong, Xian Hui Chen, Yuanbo Zhang, Gate-tunable phase transitions in thin flakes of 1T-TaS2 Nature Nanotechnology. ,vol. 10, pp. 270- 276 ,(2015) , 10.1038/NNANO.2014.323
J. A. Wilson, F. J. Di Salvo, S. Mahajan, Charge-Density Waves in Metallic, Layered, Transition-Metal Dichalcogenides Physical Review Letters. ,vol. 32, pp. 882- 885 ,(1974) , 10.1103/PHYSREVLETT.32.882
John A. Wilson, Concerning the semimetallic characters of TiS2 and TiSe2 Solid State Communications. ,vol. 22, pp. 551- 553 ,(1977) , 10.1016/0038-1098(77)90133-8
Manish Chhowalla, Hyeon Suk Shin, Goki Eda, Lain-Jong Li, Kian Ping Loh, Hua Zhang, The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets Nature Chemistry. ,vol. 5, pp. 263- 275 ,(2013) , 10.1038/NCHEM.1589