Ultra-low noise nanoscale transistors for metrology of noise, energy harvesting and biosensing applications (Invited)

摘要: Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of at low frequency. It often originates from an ensemble a huge number charges becoming trapped and de-trapped, mobility fluctuation. However, for nanoscale transistors, equations based on density traps are no more valid due to small traps. Fluctuations contacts can also be dominant noise. Here, we summarize our results this topic show addition that provide unique opportunities metrological studies In particular, propose alternative criticized but widely used unified correlated fluctuation model MOSFETs, discuss dielectric polarization/mobility noises sources trap-free gate oxides Schottky-barrier-based transistors. second part, liquid-gated (0D) transistor sensors with applications energy harvesting biosensing.