Charge transfer readout circuits

作者: Paul Kessler Weimer

DOI:

关键词: Electronic circuitElectrodeOptoelectronicsElectrical engineeringDark currentThreshold voltageField-effect transistorVoltageTransistorMaterials scienceThermal conduction

摘要: During readout, the signals induced on columns of a charge transfer array cause currents to flow through respective conduction paths field effect transistors connected columns. The threshold voltage V th each transistor is compensated for prior readout by establishing gate electrode thereof at quiescent bias level c +V , where source that transistor. effects dark current or other fixed signal it desired discriminate against associated with array, also may be reducing an amount proportional thereto.

参考文章(2)
Hubert K. Burke, Gerald J. Michon, Solid state imaging apparatus ,(1975)