作者: Paul Kessler Weimer
DOI:
关键词: Electronic circuit 、 Electrode 、 Optoelectronics 、 Electrical engineering 、 Dark current 、 Threshold voltage 、 Field-effect transistor 、 Voltage 、 Transistor 、 Materials science 、 Thermal conduction
摘要: During readout, the signals induced on columns of a charge transfer array cause currents to flow through respective conduction paths field effect transistors connected columns. The threshold voltage V th each transistor is compensated for prior readout by establishing gate electrode thereof at quiescent bias level c +V , where source that transistor. effects dark current or other fixed signal it desired discriminate against associated with array, also may be reducing an amount proportional thereto.