Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
作者： NW Strom , Zh M Wang , JH Lee , ZY AbuWaar , Yu I Mazur
DOI: 10.1007/S11671-007-9040-1
关键词: Molecular beam epitaxy 、 Nanochemistry 、 Nucleation 、 Ring (chemistry) 、 Self-assembly 、 Monolayer 、 Optoelectronics 、 Quantum dot 、 Materials science 、 Nanotechnology 、 Nanostructure
摘要: The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed a hybrid approach homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new morphologies that may find use in optoelectronic applications. Increased deposition the ring first produced hole followed QDs around (100) surface. behavior indicates prefer nucleate at locations high monolayer (ML) step density.
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R. J. Warburton, C. Schäflein, D. Haft, F. Bickel, A. Lorke, K. Karrai, J. M. Garcia, W. Schoenfeld, P. M. Petroff, Optical emission from a charge-tunable quantum ring Nature. ,vol. 405, pp. 926- 929 ,(2000) , 10.1038/35016030
Hyunho Shin, Jong-Bong Kim, Yo-Han Yoo, Woong Lee, Euijoon Yoon, Young-Moon Yu, Enhanced strain of InAs quantum dots by an InGaAs ternary layer in a GaAs matrix Journal of Applied Physics. ,vol. 99, pp. 023521- ,(2006) , 10.1063/1.2137880
M. Kroutvar, Y. Ducommun, J. J. Finley, M. Bichler, G. Abstreiter, A. Zrenner, Wavelength selective charge storage in self-assembled InGaAs/GaAs quantum dots Applied Physics Letters. ,vol. 83, pp. 443- 445 ,(2003) , 10.1063/1.1588368
Rudeesun Songmuang, Suwit Kiravittaya, Oliver G. Schmidt, Formation of lateral quantum dot molecules around self-assembled nanoholes Applied Physics Letters. ,vol. 82, pp. 2892- 2894 ,(2003) , 10.1063/1.1569992
Z. Gong, Z. C. Niu, S. S. Huang, Z. D. Fang, B. Q. Sun, J. B. Xia, Formation of GaAs∕AlGaAs and InGaAs∕GaAs nanorings by droplet molecular-beam epitaxy Applied Physics Letters. ,vol. 87, pp. 093116- ,(2005) , 10.1063/1.2037193
Zh M Wang, JH Lee, BL Liang, WT Black, Vas P Kunets, Yu I Mazur, GJ Salamo, None, Localized formation of InAs quantum dots on shallow-patterned GaAs(100) Applied Physics Letters. ,vol. 88, pp. 233102- ,(2006) , 10.1063/1.2209157
S. Godefroo, J. Maes, M. Hayne, V. V. Moshchalkov, M. Henini, F. Pulizzi, A. Patanè, L. Eaves, Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs /GaAs quantum dots Journal of Applied Physics. ,vol. 96, pp. 2535- 2539 ,(2004) , 10.1063/1.1767972
A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, R. A. Hogg, M. L. Leadbeater, C. E. Norman, M. Pepper, Detection of single photons using a field-effect transistor gated by a layer of quantum dots Applied Physics Letters. ,vol. 76, pp. 3673- 3675 ,(2000) , 10.1063/1.126745
Nobuyuki Koguchi, Keiko Ishige, Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams Japanese Journal of Applied Physics. ,vol. 32, pp. 2052- 2058 ,(1993) , 10.1143/JJAP.32.2052
Zhiming M. Wang, Kyland Holmes, John L. Shultz, Gregory J. Salamo, Self-assembly of GaAs holed nanostructures by droplet epitaxy physica status solidi (a). ,vol. 202, pp. R85- R87 ,(2005) , 10.1002/PSSA.200510031