Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics.
作者： Seyed Amir Ghetmiri , Yiyin Zhou , Joe Margetis , Sattar Al-Kabi , Wei Dou
DOI: 10.1364/OL.42.000387
关键词: Electronic band structure 、 X-ray crystallography 、 Quantum well 、 Band gap 、 Materials science 、 Optoelectronics 、 Direct and indirect band gaps 、 Photoluminescence 、 Diffraction 、 Chemical vapor deposition 、 Optics
摘要: A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled growth process. Temperature-dependent photoluminescence spectra were correlated band calculation for a accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on result, systematic study of SiGeSn GeSn bandgap energy separation barrier heights versus compositions strain conducted, leading to practical design type-I direct well.
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