Growth and Characterization of Antimony-Based Narrow-Bandgap III-V Semiconductor Crystals for Infrared Detector Applications

作者: Vijay K. Dixit , Handady L. Bhat

DOI: 10.1007/978-3-540-74761-1_11

关键词: Indium antimonideNight visionMaterials scienceBismuthCharacterization (materials science)AntimonideSemiconductorIndiumAntimonyOptoelectronics

摘要: Materials for the generation and detection of 7–12 μm wavelength radiation continue to be considerable interest many applications such as night vision, medical imaging, sensitive pollution gas monitoring, etc. For HgCdTe has been main material choice in past. However, lacks stability uniformity over a large area, only works under cryogenic conditions. Because these problems, antimony-based III–V materials have considered alternatives. Consequently, there tremendous growth research activity on InSb-based systems. In fact, compounds proved interesting both basic applied research. This chapter presents comprehensive account carried out so far. It explores aspects indium antimonide (InSb), bismuth (InBi x Sb1–x), arsenic (InAs As y Sb1–x–y) terms crystal bulk epitaxial forms device feasibility. The limiting single-phase composition InAs Sb1–x InBi using near-equilibrium technique also addressed. An overview structural, transport, optical, device-related properties is presented. Some current areas development critically reviewed their significance understanding physics well are discussed. These include role defects impurity electrical materials.

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