METHOD OF MAKING GAAS-BASED PHOTOCELL

摘要: FIELD: chemistry.SUBSTANCE: method of making photoelectric converter based on GaAs involves growing by liquid-phase epitaxy n-GaAs substrate a base layer doped with tin or tellurium, thickness 10–20 mcm and p-AlGaAs, zinc, for x = 0.2–0.3 at beginning growth 0.10–0.15 in surface region layer, wherein p-AlGaAs is grown carried temperature 600–730 °C 20–50 minutes, during this period includes formation diffusion p-n junction an emitter p-GaAs 1–2 mcm, deposition back contact thermal vacuum sputtering, annealing deposited hydrogen atmosphere, through photoresist mask front sputtering metallization galvanic simultaneous gold rear surface, separating etching structure into separate photocells application antireflection coating.EFFECT: invention enables to make photo converters increased efficiency conversion narrow-band, particular, laser radiation, can be used mass production photocells.3 cl, 2 dwg, ex