Unidirectional spin torque transfer magnetic memory cell structure and methods of programming the same
作者： Sandhu Gurtej , Liu Jun
DOI:
关键词: Spin-½ 、 Torque 、 Cell structure 、 Magnetic memory 、 Random access memory 、 Spin-transfer torque 、 Condensed matter physics 、 Layer (electronics) 、 Materials science
摘要: Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The include cells having two pinned layers a free layer therebetween. By utilizing layers, the spin effect on from each respectively, allows with unidirectional currents.
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