作者: M. S. Ramanachalam , A. Rohatgi , W. B. Carter , J. P. Schaffer , T. K. Gupta
DOI: 10.1007/BF02659707
关键词: Grain boundary 、 Annealing (metallurgy) 、 Analytical chemistry 、 Positron annihilation spectroscopy 、 Mineralogy 、 Luminescence 、 Binary compound 、 Materials science 、 Deep-level transient spectroscopy 、 Photoluminescence 、 Varistor
摘要: Photoluminescence (PL) measurements were carried out on commercial ZnO varistor samples that electrically stressed and/or annealed at different temperatures. Changes in the intensity of green and yellow luminescence centers studied as a function annealing treatment. It was found (green yellow) decrease with increase temperature, reach minimum 700°C, again beyond 800°C. Furthermore, these bands observed PL spectra are quenched samples, compared to pure ZnO. In an sample, be higher as-sintered sample. Annealing sample resulted intensity. These observations consistent previous deep level transient spectroscopy doppler positron annihilation results. All experimental results ion migration model degradation can explained using grain boundary defect model.