In Situ Characterization of Ferroelectric HfO2 During Rapid Thermal Annealing

作者: Valerio Adinolfi , Michael F. Toney , Martin E. McBriarty , Vijay Kris Narasimhan , Karl A. Littau

DOI: 10.1002/PSSR.202000598

关键词: Chemical engineeringCharacterization (materials science)Rapid thermal annealingFerroelectricityIn situMaterials scienceHafnium oxide

摘要: … The high kinetic barrier blocking the conversion to the monoclinic phase suggests that the ferroelectricity in pure HfO 2 films can be increased by using a fast ramp rate and reducing the …

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