Properties and applications of ion-implanted films
作者： K.G. Stephens , I.H. Wilson
DOI: 10.1016/0040-6090(78)90119-0
关键词: Nanotechnology 、 Doping 、 Engineering physics 、 Ion implantation 、 Thin film 、 Materials science 、 Ion 、 Sputtering 、 Alternative methods
摘要: Abstract Although ion implantation was initially used as an alternative method of doping semiconductors, it is now becoming accepted modifying many surface, near surface and bulk properties thin films materials in general. This paper reviews the work which has been done this field, concentrating especially on high dose implantation. Also included a considerable amount recent carried out by authors their colleagues. much mentioned aimed at realizing better understanding basic mechanisms that occur process, possible applications are discussed. The divided into four sections we discuss (a) range profiles ions films, (b) or metallurgical effects implantation, (c) interactions film-substrate interface finally (d) including account important consequences sputtering
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