A silicon nanocrystals based memory

摘要: A new memory structure using threshold shifting from charge stored in nanocrystals of silicon (≊5nm size) is described. The devices utilize direct tunneling and storage electrons the nanocrystals. limited size capacitance limit numbers electrons. Coulomb blockade effects may be important these structures but are not necessary for their operation. shifts 0.2–0.4 V with read write times less than 100’s a nanosecond at operating voltages below 2.5 have been obtained experimentally. retention measured days weeks, operated an excess 109 cycles without degradation performance. This nanomemory exhibits characteristics high density low power.