Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III–V Compound Semiconductors-to-Silicon Photonic Integrated Circuits
作者： Di Liang , Alexander W. Fang , Hyundai Park , Tom E. Reynolds , Keith Warner
DOI: 10.1007/S11664-008-0489-1
关键词: Plasma-enhanced chemical vapor deposition 、 Epitaxy 、 Wafer bonding 、 Semiconductor 、 Wafer 、 Surface energy 、 Materials science 、 Optoelectronics 、 Silicon 、 Thin film
摘要: … compound semiconductor-to-silicon wafer bonding is the mismatch in thermal expansion … a hybrid Si evanescent device platform. The 60 nm interfacial oxide layer composed of 30 nm …
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