Deep state of hydrogen in crystalline silicon: Evidence for metastability

摘要: After proton implantation into n-type silicon at 45 K, a bistable hydrogen center with band-gap level ${\mathit{E}}_{\mathit{c}}$-${\mathit{E}}_{\mathit{t}}$=0.16 eV is observed by deep-level transient spectroscopy. The anneals \ensuremath{\sim}100 K under zero bias decay constant \ensuremath{\nu}=(3.0\ifmmode\times\else\texttimes\fi{}${10}^{12}$ ${\mathrm{s}}^{\mathrm{\ensuremath{-}}1}$)exp[(-0.29 eV)/${\mathit{k}}_{\mathit{B}}$T] and \ensuremath{\sim}210 reverse \ensuremath{\nu}=(1.3\ifmmode\times\else\texttimes\fi{}${10}^{8}$ ${\mathrm{s}}^{\mathrm{\ensuremath{-}}1}$)exp[(-0.44 eV)/${\mathit{k}}_{\mathit{B}}$T]. In both cases the regenerates forward-bias injection low temperatures. without (with) reflects capture of one (two) electron(s). metastability ascribed to jumps between bond-center tetrahedral sites as result changes in charge states.