作者: Numan Akdoğan , Bulat Rameev , Sümeyra Güler , Osman Öztürk , Bekir Aktaş
DOI: 10.1063/1.3223583
关键词: Magnetic semiconductor 、 Cobalt 、 Condensed matter physics 、 Doping 、 Anisotropy 、 Ferromagnetic resonance 、 Ferromagnetism 、 Materials science 、 Film plane 、 Magnetic anisotropy
摘要: Magnetic anisotropies of Co-implanted ZnO (0001) films grown on single-crystalline Al2O3 (112¯0) substrates have been studied by ferromagnetic resonance (FMR) technique for different cobalt implantation doses. The FMR data show that the easy and hard axes a periodicity 60° in film plane, agreement with hexagonal structure films. This six-fold in-plane magnetic anisotropy, which is observed first time ZnO-based diluted semiconductors, attributed to substitution Zn sites structure, clear indication long range ordering between substitutional ions