Unidirectional endotaxial cobalt di-silicide nanowires on Si(110) substrates
作者： J C Mahato , Debolina Das , Nasrin Banu , Biswarup Satpati , B N Dev
关键词: Transmission electron microscopy 、 Nanodot 、 Nanowire 、 Silicon 、 Scanning tunneling microscope 、 Silicide 、 Cobalt 、 Optoelectronics 、 Materials science 、 Substrate (electronics) 、 Nanotechnology
摘要: Self-organized growth of well-ordered endotaxial silicide nanowires (NWs) on clean Si(110) surfaces has been investigated by in situ scanning tunneling microscopy (STM) and transmission electron (TEM). Co deposition reconstructed at ~600 °C produces unidirectional CoSi2 NWs reaction cobalt with the hot silicon substrate. STM investigations reveal four major types distinct NWs, all growing along [-110] in-plane direction except one type [-113] direction. There are also some nanodots. The cross-sectional TEM measurements show that two types—flat-top ridged. grow not only substrate but into flat top same crystallographic orientation as Si buried interfaces between A-type. In ridged different orientations B-type. general wider deeper
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